The technology for thin oxide growth is still emerging with a variety of techniques being used . 薄层氧化物生长工艺仍在产生一系列可供采用的技术。
2.
temperatures(around 950℃)will prevent stress-induced defect formation in a recessed structure(recess approximately land oxide growth approximately 2. 2μm). 温度在950上下就会避免在有凹槽的结构中形成应力诱发缺陷（凹槽约1m，氧化物层生长约22m）。
3.
The oxide growth in diameter during solidification is larger when the oxide size before solidification and cooling rate during solidification are smaller 凝固前初始氧化钛越小，在凝固过程中氧化钛越容易长大。
4.
The titamium oxide growth model during solidification is established according to the basic rules of segregation and diffusion 摘要根据凝固过程中溶质元素偏析和扩散的基本规律，建立了凝固过程中氧化钛的长大模型。
